High‑flow high‑loading spherical silica filler with precision‑tuned particle‑size distribution. The smooth spherical particle geometry reduces internal friction inside resin matrix, supporting high filler loading while maintaining favorable flow characteristics. This inorganic filler is engineered for CPO IC substrate and LMC semiconductor packaging composites to lower thermal expansion and enhance mechanical and dimensional stability of cured resin systems.
Product Detail PageSpherical Silica Filler High‑Flow High‑Loading CAS 7631‑86‑9, Precision Particle Size for CPO IC Substrate & LMCThis spherical silica filler is fabricated by high‑temperature fusion and atomization technology to obtain smooth, round amorphous silica particles with strictly controlled precision particle‑size distribution. The rounded particle contour minimizes inter‑particle friction during resin compounding, which is the core foundation for achieving high filler loading without sharply increasing system viscosity.
When adopted for CPO IC substrate formulations, this filler restricts the coefficient of thermal expansion of the substrate composite. It effectively mitigates warpage issues that frequently occur during multi‑layer lamination and high‑temperature assembly processes of high‑density IC substrates. The low‑impurity specification guarantees consistent electrical insulation performance for high‑speed signal transmission circuits.
For LMC (Liquid Molding Compound) semiconductor packaging materials, the graded particle‑size distribution improves slurry flow behavior during dispensing and molding operations. It reduces internal residual stress after resin curing, lowering the risk of micro‑crack formation within the molded encapsulation layer under thermal cycling conditions.
The product exhibits excellent wet‑out performance with epoxy resin and other thermosetting matrices used in substrate and liquid molding compound formulas. Customized particle‑size fractions can be selected to match different viscosity targets, filler loading levels and lamination‑process parameters of CPO IC substrate production.
Strict quality control is implemented to restrict oversized coarse particles, preventing scratch defects on fine circuit traces during substrate manufacturing. The material requires sealed dry storage to avoid moisture absorption before batching. Foreign‑substance contamination must be prevented during powder transportation and feeding. This high‑flow high‑loading spherical silica serves as a key inorganic filler for advanced CPO IC substrate and LMC semiconductor packaging composites.

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