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(JSYAPG-OILDIA) Diamond Lapping Slurry Oil-Based CAS 7782-40-3, for Hard Alloy, Ceramic, Gem & Optical Mold Polish

(JSYAPG-OILDIA) Diamond Lapping Slurry Oil-Based CAS 7782-40-3, for Hard Alloy, Ceramic, Gem & Optical Mold Polish

JSYAPG‑OILDIA oil‑based diamond lapping slurry adopts graded micron synthetic diamond powder dispersed within high‑quality mineral‑oil carrier. It is formulated with specialized oil‑soluble dispersants, anti‑oxidation additives and extreme‑pressure lubricants. This slurry is designed for precision lapping and polishing of cemented hard alloy, dense technical ceramic, natural and synthetic gemstones, as well as precision optical mould inserts. Superior oil‑based lubrication reduces frictional hea
(JSYAPG-CLASSIC) CMP Slurry Silicon Carbide (SiC) Abrasive-Free Permanganate-Based, High Removal Rate Low Defect for SiC Wafer

(JSYAPG-CLASSIC) CMP Slurry Silicon Carbide (SiC) Abrasive-Free Permanganate-Based, High Removal Rate Low Defect for SiC Wafer

JSYAPG‑CLASSIC SiC CMP slurry is an abrasive‑free liquid polishing formulation built on permanganate oxidizing chemistry. Without adding solid hard abrasive particles, this slurry relies on strong chemical oxidation combined with pad‑assisted mechanical wiping to realize wafer surface planarization. It achieves high material removal rate while greatly reducing scratch‑inducing hazards originating from hard abrasive grains. This product is developed for final CMP processing of 4H‑SiC and 6H‑SiC w
(JSYAPG-DIA) Diamond Lapping Slurry Water-Based CAS 7782-40-3, Multi-Grit Micron Diamond for Ceramic, Sapphire & Hard Alloy

(JSYAPG-DIA) Diamond Lapping Slurry Water-Based CAS 7782-40-3, Multi-Grit Micron Diamond for Ceramic, Sapphire & Hard Alloy

JSYAPG‑DIA water‑based diamond lapping slurry uses graded micron‑sized synthetic diamond powder as core abrasive. It is compounded with specialized wetting agents, high‑efficiency dispersants, anti‑settling stabilizers and water‑based lubricants. This product is available in multiple particle‑size grades to match different rough lapping, fine lapping and pre‑polishing procedures. It is developed for processing high‑hardness substrates including technical ceramic, sapphire wafer and cemented hard
(JSYAPG-FAL) Alumina Lapping Slurry Calcined CAS 1344-28-1, for Metal, Glass & Ceramic Precision Grinding & Polish

(JSYAPG-FAL) Alumina Lapping Slurry Calcined CAS 1344-28-1, for Metal, Glass & Ceramic Precision Grinding & Polish

JSYAPG‑FAL calcined alumina lapping slurry is an aqueous lapping suspension using high‑grade calcined alumina as the core abrasive. It is compounded with dispersing agents, anti‑sedimentation stabilizers and friction‑reducing lubricants. This slurry is suitable for precision grinding and polishing of metal hardware, optical glass and structural ceramic components. Controlled abrasive grain hardness delivers stable material removal while minimizing deep scratch defects. The concentrated stock slu
(JSYAPG-9222) Alumina Polishing Slurry Polycrystalline Alpha CAS 1344-28-1, for Sapphire C-Face, Hard Alloy & Ceramic

(JSYAPG-9222) Alumina Polishing Slurry Polycrystalline Alpha CAS 1344-28-1, for Sapphire C-Face, Hard Alloy & Ceramic

JSYAPG‑9222 polycrystalline alpha alumina polishing slurry is a water‑based precision polishing suspension. Polycrystalline alpha‑alumina abrasive serves as the core functional ingredient, combined with specialized dispersants, lubricants and anti‑settling stabilizers. This slurry is developed for surface finishing of sapphire C‑face wafers, cemented hard alloy and high‑density structural ceramics. The unique polycrystalline abrasive microstructure produces progressive micro‑cutting action inste
(JSYAPG-HDKI13) Fumed Silica CMP Abrasive Semiconductor-Grade CAS 112945-52-5, Ultra-Low Metal Low-Coarse Scratch-Free

(JSYAPG-HDKI13) Fumed Silica CMP Abrasive Semiconductor-Grade CAS 112945-52-5, Ultra-Low Metal Low-Coarse Scratch-Free

JSYAPG‑HDKI13 semiconductor‑grade fumed silica CMP abrasive is produced by high‑temperature flame pyrolysis process. It is subjected to deep purification and rigorous coarse‑particle removal treatment. This product possesses ultra‑low metallic impurity and extremely low coarse‑particle content. It is designed as key raw abrasive for manufacturing semiconductor CMP polishing slurries. It helps to reduce micro‑scratch defects on wafer surfaces and satisfies strict material requirements for advance
(JSYAPG-L90) Fumed Silica CMP Abrasive Hydrophilic BET 90m²/g CAS 112945-52-5, Low-Metal for Optical Glass & Ceramic Polish

(JSYAPG-L90) Fumed Silica CMP Abrasive Hydrophilic BET 90m²/g CAS 112945-52-5, Low-Metal for Optical Glass & Ceramic Polish

JSYAPG‑L90 hydrophilic fumed silica CMP abrasive is a flame‑pyrolysis‑produced inorganic polishing raw material. It features hydrophilic surface property with specific surface area of BET 90m²/g and strictly controlled low‑metal impurities. This fumed silica can be formulated into polishing slurry for optical glass and dense technical ceramic workpieces. The particle size distribution is tightly controlled to minimize coarse grit fraction. It delivers consistent cutting performance while reducin
(JSYAPG-SIC) CMP Slurry Silicon Carbide (SiC) High Removal Rate for SiC Wafer, Power Electronics & LED Substrate

(JSYAPG-SIC) CMP Slurry Silicon Carbide (SiC) High Removal Rate for SiC Wafer, Power Electronics & LED Substrate

JSYAPG‑SIC silicon carbide CMP slurry is a dedicated chemical‑mechanical polishing fluid for hard wide‑bandgap SiC wafers. Classified high‑hardness nano‑abrasive particles are dispersed within an ultra‑pure aqueous system together with customized strong oxidizing agents, wetting agents and suspension stabilizers. This product achieves high material‑removal efficiency for 4H‑SiC and 6H‑SiC wafers. It effectively reduces deep subsurface micro‑cracks generated during polishing and prepares high‑qua
(JSYAPG-SP3000) Sapphire Lapping Slurry High Removal Rate 20–25µm/hr for Sapphire C/A/R-Face, Low Sub-Surface Damage

(JSYAPG-SP3000) Sapphire Lapping Slurry High Removal Rate 20–25µm/hr for Sapphire C/A/R-Face, Low Sub-Surface Damage

JSYAPG‑SP3000 sapphire lapping slurry is a high‑efficiency rough lapping aqueous slurry for sapphire crystal substrates. Classified rigid inorganic abrasive particles are homogeneously dispersed in ultra‑pure aqueous medium, combined with specialized suspension agents, lubricants and surface conditioning additives. This product is suitable for C‑face, A‑face and R‑face sapphire wafer lapping with targeted material removal rate ranging from 20‑25µm/hr. It removes thick grinding layers rapidly and
(JSYAPG-SP1000) CMP Slurry Sapphire Nano-Abrasive for Sapphire C/A-Face LED Substrate, Ra 0.7–1nm Low Defect

(JSYAPG-SP1000) CMP Slurry Sapphire Nano-Abrasive for Sapphire C/A-Face LED Substrate, Ra 0.7–1nm Low Defect

JSYAPG‑SP1000 sapphire CMP slurry is a high‑precision final‑stage polishing fluid dedicated to sapphire LED substrates. Well‑classified nano‑sized inorganic abrasive particles are dispersed in ultra‑pure aqueous medium with customized pH regulators and lubricating surface additives. This slurry targets C‑face and A‑face sapphire wafers for LED epitaxy. It removes residual lapping traces and subsurface micro‑damage, achieving fine surface roughness within Ra 0.7‑1nm while minimizing scratch defec
(JSYAPG-NOVUS) CMP Slurry Molybdenum/Cobalt/Aluminum, High-Selectivity Metal Interconnect Polish for Advanced Node

(JSYAPG-NOVUS) CMP Slurry Molybdenum/Cobalt/Aluminum, High-Selectivity Metal Interconnect Polish for Advanced Node

JSYAPG‑NOVUS multi‑metal CMP slurry is a dedicated aqueous polishing slurry designed for advanced‑node semiconductor metal interconnect fabrication. High‑purity inorganic abrasive is combined with proprietary oxidizing agents, metal‑specific complexing agents and selective corrosion inhibitors. This slurry realizes controlled planarization for molybdenum, cobalt and aluminum interconnect films. It delivers high polishing selectivity between target metal, barrier material and surrounding low‑k di
(JSYAPG-IDIE L) CMP Slurry Fumed Silica for ILD Interlayer Dielectric Planarization CAS 112945-52-5, High-Purity Advanced Node

(JSYAPG-IDIE L) CMP Slurry Fumed Silica for ILD Interlayer Dielectric Planarization CAS 112945-52-5, High-Purity Advanced Node

JSYAPG‑IDIE L fumed silica CMP slurry is a high‑purity dielectric‑oriented polishing slurry targeted for advanced‑node semiconductor manufacturing. Flame‑synthesized fumed silica acts as the core abrasive, dispersed in ultra‑pure aqueous medium with customized pH regulators and surface‑modifying additives. This product is designed for ILD inter‑layer dielectric planarization between multi‑layer metal interconnects. It maintains controllable oxide removal rate, reduces micro‑scratch risk and impr

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Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.


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