JSYAPG‑CLASSIC SiC CMP slurry is an abrasive‑free liquid polishing formulation built on permanganate oxidizing chemistry. Without adding solid hard abrasive particles, this slurry relies on strong chemical oxidation combined with pad‑assisted mechanical wiping to realize wafer surface planarization. It achieves high material removal rate while greatly reducing scratch‑inducing hazards originating from hard abrasive grains. This product is developed for final CMP processing of 4H‑SiC and 6H‑SiC w

Product Detail

Product Detail Page: JSYAPG‑CLASSIC permanganate‑based CMP slurry does not incorporate any inorganic solid abrasive. The liquid formulation consists of high‑purity permanganate oxidizer, pH‑modulating agents, surface‑regulating additives and ultra‑pure aqueous carrier. Strict filtration is performed during production to eliminate micro‑particulate contaminants. Each production batch undergoes rigorous inspection for residual particle count and trace‑ion content, to satisfy quality requirements for wide‑bandgap semiconductor substrate fabrication.

Silicon carbide possesses extremely high hardness and excellent chemical inertness, which creates substantial challenges for wafer planarization. Conventional SiC CMP slurries loaded with diamond or alumina abrasives tend to introduce micro‑scratches and hidden subsurface damage. Those subsurface defects cannot be eliminated completely by subsequent cleaning steps. During high‑temperature epitaxial growth, the residual defects will propagate into the epitaxial layer, generating dislocations, stacking faults and other crystal imperfections. Such defects severely degrade the blocking voltage, leakage characteristics and long‑term reliability of finished SiC power semiconductor chips.

Working through an abrasive‑free chemical‑mechanical mechanism, the permanganate oxidant modifies the top surface of SiC wafer by forming a thin, soft oxidized layer. This fragile oxidized surface film is then mechanically wiped away by the asperities of the CMP polishing pad. Continuous cycles of surface oxidation and pad‑based material stripping sustain stable and high removal performance. Since there are no suspended hard abrasive particles inside the slurry, the probability of particle‑triggered micro‑scratches on wafer surfaces is substantially reduced. This slurry targets the final planarization stage after diamond rough‑lapping, helping to deliver epi‑ready SiC wafer surfaces with low subsurface damage.

Process engineers can dilute the concentrated stock slurry with ultra‑pure deionized water to adjust working oxidant concentration. Polishing results are tuned by optimizing critical CMP parameters including polishing down‑force, platen rotational speed, slurry flow‑rate and selection of dedicated CMP pad. Recirculation filtration is recommended for continuous mass‑production runs to suppress incidental particulate contamination.

Foreign chemical contamination, prolonged high‑temperature storage and direct sunlight exposure must be strictly avoided. Elevated temperature will accelerate the decomposition of permanganate active ingredients, leading to performance degradation. Once chemical decomposition occurs, the slurry cannot be deployed for SiC wafer CMP.

Major application fields include final CMP planarization for 4H‑SiC and 6H‑SiC power‑semiconductor wafers, removal of residual subsurface damage after diamond lapping, epi‑ready surface preparation for wide‑bandgap semiconductor substrates.

Store the product in tightly‑sealed original plastic drums within 5‑25℃. Keep away from direct sunlight, reducing agents and organic contaminants. Inspection of oxidizing activity is suggested before using long‑term stored batches.

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(JSYAPG-CLASSIC) CMP Slurry Silicon Carbide (SiC) Abrasive-Free Permanganate-Based, High Removal Rate Low Defect for SiC Wafer

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.