High-Purity Spherical Fused Silica CAS 7631-86-9, Low-Radioactivity Low-Metal for Semiconductor Sealing & CPO
High‑purity spherical fused silica, CAS 7631‑86‑9. Manufactured by high‑temperature fusion, atomization and deep purification processes to realize low‑radioactivity and low‑metal specifications. This inorganic filler is dedicated to semiconductor sealing and CPO advanced packaging applications. It minimizes alpha‑particle emission risk for high‑density chips, lowers composite thermal expansion coefficient and maintains stable insulation performance for high‑reliability encapsulation resin system
Product Detail PageHigh‑Purity Spherical Fused Silica CAS 7631‑86‑9, Low‑Radioactivity Low‑Metal for Semiconductor Sealing & CPOThis high‑purity spherical fused silica is produced from carefully selected high‑grade silica raw materials via high‑temperature melting, atomization, spheronization, followed by multi‑stage deep purification and classification workflows. Special purification procedures effectively remove trace radioactive elements such as uranium and thorium, as well as harmful heavy‑metal and alkali‑metal impurities. The final product delivers low‑radioactivity and low‑metal characteristics with uniform amorphous spherical particle morphology.
Low‑radioactivity performance drastically reduces alpha‑particle emission. It is critical for memory‑integrated circuits and high‑density logic chips within CPO advanced packaging, because alpha‑particle radiation may trigger random soft‑error events inside microelectronic devices. The rounded spherical particle profile decreases inter‑particle friction in epoxy resin matrices, supporting relatively high filler loading without excessive viscosity growth during molding and sealing operations.
When used for conventional semiconductor sealing and CPO encapsulation, this spherical fused silica reduces the thermal expansion coefficient of cured epoxy molding compounds. It mitigates thermally‑induced mechanical stress between silicon die and the encapsulation resin during repeated thermal cycling, decreasing the probability of package delamination, interfacial separation and internal micro‑cracks.
Strictly controlled alkali‑metal and ionic impurity levels suppress ion migration under combined high‑temperature and high‑humidity operating conditions, securing long‑term electrical insulation reliability for finished semiconductor packages. This silica filler shows good natural compatibility with standard epoxy‑phenolic EMC resin systems. Custom silane surface treatment can be applied to enhance interfacial bonding between silica particles and polymer matrix, further improving composite mechanical strength and moisture resistance.
Different particle‑size fractions can be proportionally blended to build targeted particle‑size grading, adapting to varied molding flow requirements for different semiconductor sealing and CPO packaging formulations. The powder product requires hermetic sealing and dry storage to avoid moisture absorption. During material weighing, transportation and batching, cross‑contamination with ordinary silica grades of higher radioactivity and higher metal content must be strictly prevented. This low‑radioactivity low‑metal high‑purity spherical fused silica is a premium inorganic filler solution for high‑reliability semiconductor sealing and advanced CPO packaging materials.
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