Tin-Doped Titanium Dioxide is a high-performance semiconductor sensing material marked with CAS 13463-67-7, specially engineered for metal oxide gas sensors. Tin doping modifies the electronic band structure and introduces abundant surface oxygen vacancies, greatly boosting surface adsorption and charge transfer efficiency. When target gas molecules contact the material surface, the electrical resistance of Sn-doped TiO₂ changes obviously. This property enables reliable detection of carbon monox
Chemical Identity / TDSProduct Name: Tin-Doped Titanium Dioxide for Gas Sensor CAS No.:13463-67-7 Chemical Type: Sn-doped TiO₂ semiconductor powder Physical Form: White fine powder Core Benefit: High sensitivity semiconductor material for CO, ethanol and H₂S gas detection
Key PerformanceThis Sn-doped TiO₂ exhibits outstanding gas-sensing performance for reducing gases. The tin doping optimizes carrier concentration and surface active sites, achieving rapid response and recovery to CO, ethanol and H₂S. It maintains stable sensing signal under proper working temperature. Particle size, doping ratio, crystallinity and surface modification can be adjusted for customized sensor requirements. Sintering parameters, operating temperature range and formulation guidance refer to manufacturer TDS.
Applications
ComplianceIndustrial functional inorganic material. TDS, MSDS and relevant compliance certificates can be provided for export audit upon request.
Why Choose JSYShenzhen Jishengya Technology supplies factory direct Tin-Doped Titanium Dioxide for Gas Sensor CAS 13463-67-7. Our Sn-doped TiO₂ provides stable and sensitive gas detection performance for gas sensor manufacturers.

Copy product links
Long by picture save/share

