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(JSYAPG-PL4000) CMP Slurry Oxide Film for ILD/STI & Multi-Layer Interconnect Wafer Planarization, High-Purity Colloidal Silica
JSYAPG‑PL4000 oxide‑film CMP slurry is a semiconductor‑grade chemical‑mechanical polishing slurry adopting high‑purity spherical colloidal silica as core abrasive. It is formulated for ILD inter‑layer dielectric planarization, STI shallow trench isolation processing and multi‑layer interconnect wafer planarization. With strictly controlled particle‑size distribution and low ionic‑impurity level, this slurry realizes balanced oxide removal rate and superior global planarization capability. The co
(JSYAPG-NOVA) CMP Slurry Advanced-Node for Logic & Memory Chip Multi-Step Planarization, Low-Defect Wafer Polish
JSYAPG‑NOVA advanced‑node CMP slurry is a high‑performance chemical‑mechanical polishing slurry targeted for fine‑node semiconductor fabrication. High‑purity controlled‑size colloidal silica serves as core abrasive, compounded with carefully balanced functional additives. This slurry supports multi‑sequential CMP planarization workflows for logic and memory wafers. It minimizes micro‑scratches, residual particles and topographical defects. The stock slurry can be diluted with ultra‑pure deionize
(JSYAPG-ACU) CMP Slurry Copper Barrier for Damascene Interconnect, Tunable Selectivity Low-Erosion Barrier Polish
JSYAPG‑ACU copper barrier CMP slurry is a specialized chemical‑mechanical polishing slurry designed for semiconductor backend damascene interconnect manufacturing. High‑purity inorganic abrasive is combined with proprietary complexing agents, corrosion inhibitors and pH regulators. This formulation delivers tunable polishing selectivity among copper, barrier metal and dielectric films. It achieves low‑erosion barrier‑layer planarization and minimizes recess and dishing defects on copper intercon
(JSYAPG-OPTI) CMP Slurry Oxide for FEOL & Poly-Si Chemical Mechanical Polishing, Tunable Selectivity Low-Defect Wafer
JSYAPG‑OPTI oxide CMP slurry is a functional chemical‑mechanical polishing slurry developed for semiconductor FEOL manufacturing processes. Spherical high‑purity colloidal silica acts as the core abrasive, matched with tailored chemical additives. This slurry realizes tunable removal selectivity between silicon‑oxide and poly‑silicon films. It delivers low‑defect planarization performance for front‑end wafer processing. The stock slurry can be diluted or adjusted according to fab process require
(JSYAPG-K1730) CMP Slurry Colloidal Silica Alkaline CAS 112926-00-8, High-Removal Oxide Substrate Planarization
JSYAPG‑K1730 is an alkaline electronic‑grade colloidal‑silica‑based CMP slurry. Spherical amorphous silica nanoparticles are dispersed in high‑purity aqueous alkaline medium under tightly‑controlled synthesis and formulation conditions. The alkaline environment enhances chemical etching effect on silicon‑based oxide materials, achieving high removal‑rate planarization for oxide substrates. It can be applied directly or diluted with ultra‑pure deionized water to meet different semiconductor fab p
(JSYAPG-K30N) CMP Slurry Colloidal Silica Standard CAS 112926-00-8, Post-Metal Buffer Polish & General CMP Low Defect
JSYAPG‑K30N is a standard electronic‑grade colloidal‑silica‑based CMP slurry. Spherical amorphous silica nanoparticles are dispersed in high‑purity aqueous solution under controlled synthesis and purification procedures. This product is dedicated to post‑metal buffer polishing and various general semiconductor CMP applications. It features balanced removal efficiency and excellent surface finishing quality. The slurry can be used directly or diluted with ultra‑pure deionized water to satisfy dif
(JSYAPG-K30N) CMP Slurry Colloidal Silica Standard CAS 112926-00-8, Post-Metal Buffer Polish & General CMP Low Defect
JSYAPG‑K30N is a standard electronic‑grade colloidal‑silica‑based CMP slurry. Spherical amorphous silica nanoparticles are dispersed in high‑purity aqueous solution under controlled synthesis and purification procedures. This product is dedicated to post‑metal buffer polishing and various general semiconductor CMP applications. It features balanced removal efficiency and excellent surface finishing quality. The slurry can be used directly or diluted with ultra‑pure deionized water to satisfy dif
(JSYAPG-K30V) CMP Slurry Colloidal Silica High-Concentration 30%+ CAS 112926-00-8, ILD & Poly-Si Planarization Low Defect
JSYAPG‑K30V is a high‑concentration colloidal‑silica‑based CMP polishing slurry for semiconductor processing. Through optimized synthesis and surface‑stabilization technology, the slurry sustains over 30 wt% silica solid content without spontaneous particle agglomeration. It is developed for ILD inter‑layer dielectric planarization and poly‑silicon planarization processes. This concentrated base slurry provides flexible formulation options; users can dilute with ultra‑pure deionized water to adj
JSYAPG-K1501) CMP Slurry Colloidal Silica for ILD & STI Oxide Planarization CAS 112926-00-8, High-Stability Water-Glass Silica
JSYAPG‑K1501 CMP slurry is a water‑glass‑derived colloidal‑silica‑based polishing suspension for semiconductor CMP processes. Spherical amorphous silica abrasives are synthesized from water‑glass raw material under tightly‑controlled particle‑growth conditions. The finished slurry exhibits outstanding colloidal stability. It is formulated for ILD inter‑layer dielectric planarization and STI shallow‑trench‑isolation oxide polishing. This CMP slurry delivers consistent oxide material removal perfo
(JSYAPG-PX30) Colloidal Silica Slurry High-Surface-Area 30% CAS 112926-00-8, Amorphous Silica for Catalyst, Refractory & Ceramic
JSYAPG‑PX30 colloidal silica slurry is water‑based amorphous silica sol with 30 wt% SiO₂ solid content. Controlled synthesis yields fine silica nanoparticles delivering high specific surface area and abundant surface silanol groups. It serves as inorganic binder and functional raw material for catalyst production, refractory materials and ceramic systems. This silica slurry can be used directly or diluted with deionized water to satisfy various high‑temperature industrial formulation requirement
(JSYAPG-SKL) Colloidal Silica Slurry Monodisperse Small-Particle CAS 112926-00-8, High-Bond Precision Electronic Polish & Catalyst
JSYAPG‑SKL monodisperse small‑particle colloidal silica slurry is aqueous amorphous nano‑silica sol produced via controlled synthesis technology. It is characterized by monodisperse small silica nanoparticles with extremely narrow particle‑size distribution. The particle surface possesses abundant active silanol groups for high‑bonding performance. This slurry can be directly applied for precision electronic polishing and also used as high‑surface‑area carrier for catalyst active components. It
(JSYAPG-AS40) Colloidal Silica Slurry Ammonium-Stabilized 40% CAS 112926-00-8, Sodium-Free Low-Metal CMP for Semiconductor Wafer
JSYAPG‑AS40 ammonium‑stabilized colloidal silica slurry is water‑based amorphous nano‑silica sol with 40 wt% SiO₂ solid content. Adopting ammonium‑ion stabilization instead of sodium‑based stabilizer, this product achieves sodium‑free property with strictly controlled trace heavy‑metal impurities. Spherical silica nanoparticles deliver stable abrasive performance for semiconductor wafer CMP. It can be applied directly or diluted with ultra‑pure deionized water to satisfy different electronic‑gra
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