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(JSYAPG-WIN) CMP Slurry Tungsten High Selectivity for Tungsten Plug, Atomic-Smooth Defect-Free Wafer Polish
JSYAPG‑WIN tungsten CMP slurry is a specialized chemical‑mechanical polishing slurry for semiconductor tungsten plug manufacturing. High‑purity inorganic abrasive is compounded with balanced oxidizing agents, complexing components and selective corrosion inhibitors. This slurry delivers high polishing selectivity between tungsten metal and surrounding oxide dielectric. It removes excess deposited tungsten while minimizing dishing, erosion and micro‑scratches, yielding atomic‑smooth, defect‑free
(JSYAPG-SS12) CMP Slurry Colloidal Silica KOH-Based Ready-to-Use CAS 112926-00-8, Oxide Film Polish for Semiconductor Wafer
JSYAPG‑SS12 KOH‑based colloidal silica CMP slurry is a ready‑to‑use alkaline polishing fluid for semiconductor oxide‑film planarization. Spherical amorphous colloidal silica nanoparticles serve as the core abrasive within potassium‑hydroxide adjusted alkaline aqueous system. No further dilution is required before production deployment. This slurry realizes efficient and uniform material removal on silicon‑oxide dielectric films. It controls micro‑scratch formation and maintains excellent within‑
(JSYAPG-QUART) Colloidal Silica Slurry 6N Ultra-High-Purity CAS 112926-00-8, Sol-Gel Metal Ions <1ppm for Semiconductor CMP
JSYAPG‑QUART colloidal silica slurry is a high‑end semiconductor‑grade CMP polishing abrasive manufactured via sol‑gel synthesis route. It features 6N ultra‑high purity with total metal‑ion impurities controlled under 1ppm. Spherical amorphous silica nanoparticles are evenly dispersed in ultra‑pure aqueous medium. This slurry is designed for critical semiconductor chemical‑mechanical planarization workflows. It effectively suppresses metallic contamination, reduces micro‑scratches and particle‑i
(JSYAPG-CLEALITE) Metal Polishing Slurry Ultra-Fine for Metal Super-Finishing & Automotive Exterior Paint, High Gloss
JSYAPG‑CLEALITE ultra‑fine metal polishing slurry is a water‑based fine‑grade polishing suspension developed for super‑finishing operations. Ultra‑fine mineral abrasive particles are dispersed together with lubricating agents, wetting components and surface‑smoothing additives. This product is suitable for high‑gloss super‑finishing of metallic workpieces as well as fine polishing of automotive exterior paint coats. It removes fine sanding marks, micro‑scratches and orange‑skin traces, producing
(JSYAPG-GLANZOX) Colloidal Silica Final Polish Slurry Ultra-High-Purity for Silicon Wafer & Epitaxial Wafer, Low Defect
JSYAPG‑GLANZOX colloidal silica final polish slurry is a high‑end final‑stage polishing slurry for semiconductor silicon‑based substrates. Spherical ultra‑high‑purity colloidal silica nanoparticles act as core abrasive, compounded with specialized pH regulators and wetting additives. This product is dedicated to the final polishing of bare silicon wafers and epitaxial wafers. It removes micro‑scratches, subsurface residual damage and surface haze, delivering ultra‑smooth wafer surface with minim
(JSYAPG-COMPOL103) Alumina Polishing Slurry CAS 1344-28-1, High-Purity Aluminum Oxide for Stainless Steel, Crystal & Optics
JSYAPG‑COMPOL103 alumina polishing slurry is a precision aqueous polishing suspension based on high‑purity fine‑grained alumina abrasive. Optimized dispersing agents, suspension stabilizers and surface conditioning additives are formulated into the system. This slurry delivers controlled cutting performance for stainless steel parts, hard crystal blanks and optical components. It removes grinding marks and surface blemishes to achieve uniform fine‑finished surfaces. The concentrated stock slurry
(JSYAPG-COMPOL80) Colloidal Silica Polishing Slurry for LiTaO₃/LiNbO₃, Sapphire, Metal & Ceramic Substrate, Damage-Free
JSYAPG‑COMPOL80 colloidal silica polishing slurry is a high‑precision finishing slurry developed for hard brittle crystal and ceramic substrates. Spherical high‑purity colloidal silica nanoparticles serve as the core abrasive, matched with specialized pH regulators and surface lubricating additives. It realizes damage‑free polishing on lithium tantalate, lithium niobate, sapphire, selected metal and ceramic substrates. This slurry minimizes subsurface micro‑cracks and scratches. Concentrated sto
(JSYAPG-PL8000) CMP Slurry Barrier Layer for Post-Copper Polish, High Selectivity Low-Erosion Barrier Planarization
JSYAPG‑PL8000 barrier‑layer CMP slurry is a specialized backend‑semiconductor‑grade polishing slurry developed for post‑copper barrier planarization. High‑purity inorganic abrasive is combined with proprietary oxidants, chelating agents and corrosion‑suppressing additives. This slurry removes residual tantalum‑based barrier material after bulk copper polishing. It maintains high polishing selectivity between barrier metal, copper lines and surrounding low‑k dielectric, minimizing copper line rec
(JSYAPG-PL7000) CMP Slurry Copper (Cu) for Copper Damascene Interconnect, Ultra-High-Purity Silica Low Erosion Low Residue
JSYAPG‑PL7000 copper CMP slurry is a backend‑grade chemical‑mechanical polishing slurry dedicated to copper damascene interconnect processes. Ultra‑high‑purity colloidal silica acts as the core abrasive, combined with carefully selected oxidizing agents, copper corrosion inhibitors and metal‑chelating additives. This slurry realizes efficient removal of over‑deposited copper layers while suppressing line erosion, dishing and residual particle contamination on fine copper wiring. The concentrated
(JSYAPG-PL6500) CMP Cleaning Slurry Post-Polish Particle Removal for Poly-Si Film, Defect Reduction Wafer Clean
JSYAPG‑PL6500 CMP cleaning slurry is a dedicated post‑CMP surface‑treatment cleaning medium for poly‑silicon wafer films. Formulated with high‑purity dispersing components, chelating agents and surface‑active additives in ultra‑pure aqueous base, this product targets abrasive residues, metallic contaminants and micro‑particles remaining on poly‑Si surfaces after poly‑silicon CMP. It releases adsorbed particles from wafer substrate and inhibits particle re‑deposition, achieving defect‑reduction w
(JSYAPG-PL6000) CMP Slurry Poly-Silicon for Poly-Si Gate & Post-POP Gate Process, High-Purity Low-Defect Wafer
JSYAPG‑PL6000 poly‑silicon CMP slurry is a front‑end semiconductor‑grade chemical‑mechanical polishing slurry. High‑purity spherical colloidal silica serves as the core abrasive, combined with tailored pH regulators and surface‑modulating additives. This slurry is designed for poly‑silicon gate planarization and Post‑POP gate sequential processing. It provides controlled poly‑silicon removal rate and minimizes micro‑scratches, dishing and surface residual particles. The concentrated base slurry
(JSYAPG-PL5000) CMP Slurry Tungsten (W) for Tungsten Plug & Memory Word-Line Contact, High Removal Rate Low Defect
JSYAPG‑PL5000 tungsten CMP slurry is a dedicated chemical‑mechanical polishing slurry for semiconductor tungsten‑based structures. It adopts high‑purity inorganic abrasive together with optimized oxidizing agents, complexing agents and corrosion inhibitors. This slurry achieves efficient removal of over‑deposited tungsten for tungsten plug formation and memory word‑line contact processing. It suppresses dishing and erosion defects on tiny tungsten features. The concentrated base slurry can be di
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