High‑purity aluminum nitride powder, CAS 24304‑00‑5, intrinsic thermal conductivity 180‑200W/mK. It is synthesized via carbothermal reduction nitridation process, followed by de‑agglomeration and precise classification. This nitride ceramic powder features excellent thermal conductivity and superior electrical insulation. It is used as raw material for CPO ceramic substrates and functional filler for TIM thermal‑interface materials, supporting high‑efficiency heat dissipation for high‑density an

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Product Detail PageAluminum Nitride Powder High‑Purity CAS 24304‑00‑5, Thermal Conductivity 180‑200W/mK for CPO Substrate & TIMThis high‑purity aluminum nitride powder is produced by carbothermal reduction‑nitridation of alumina under nitrogen atmosphere. After high‑temperature synthesis, the material goes through crushing, de‑agglomeration, purification and multi‑stage air classification. Strict impurity control minimizes oxygen content and reduces residual metallic contaminants. The product exhibits intrinsic thermal conductivity ranging from 180‑200W/mK together with outstanding electrical insulation performance. Particle‑size distribution is tightly controlled to satisfy both ceramic sintering and composite filling requirements.

When applied as starting raw powder for CPO ceramic substrates, well‑graded AlN powder facilitates densified sintering. It helps to fabricate thin, high‑thermal‑conductivity ceramic substrates for high‑power CPO optical and electrical packaging modules. The sintered aluminum nitride ceramic substrate rapidly spreads localized hot‑spot heat generated from high‑density optoelectronic chips, reducing operating temperature and suppressing thermal‑induced deformation of the whole CPO package. Low oxygen impurity level is critical for maintaining high thermal conductivity of final sintered ceramic parts.

For TIM thermal‑interface‑material formulations, aluminum nitride powder serves as premium thermally‑conductive inorganic filler. Incorporated into silicone or epoxy‑based thermal gap fillers, thermal greases and thermal pads, it builds continuous heat‑conducting pathways inside polymer matrix. Thanks to its high thermal conductivity and reliable insulation property, the resulting TIM composite efficiently transfers heat while preventing electrical short‑circuit risks inside densely packed semiconductor assemblies.

Surface modification treatment can be performed on AlN powder. Proper silane coating improves powder dispersion within organic resin matrices, reduces viscosity rise during compounding, and suppresses the hydrolysis tendency of aluminum nitride particles under humid conditions. It can also be blended with spherical alumina or boron nitride powders to formulate hybrid thermal‑conductive filler systems for customized TIM recipes.

Aluminum nitride powder is susceptible to hydrolysis when exposed to moist air. Hermetic, moisture‑proof sealed storage is strictly required. During powder weighing, conveying and batching operations, cross‑contamination with alumina or other oxide ceramic powders must be avoided. Foreign oxide contamination will increase sintered body oxygen content and degrade final thermal conductivity of sintered CPO substrates. This high‑purity aluminum nitride powder is a key thermal‑management ceramic material for CPO substrate production and high‑performance TIM thermal‑interface materials used within high‑power semiconductor and optoelectronic industries.

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Aluminum Nitride Powder High-Purity CAS 24304-00-5, Thermal Conductivity 180–200W/mK for CPO Substrate & TIM

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.