High‑thermal aluminum nitride ceramic substrate, CAS 24304‑00‑5. It is fabricated from high‑purity AlN powder through tape‑casting, lamination, high‑temperature sintering and precision finishing. This dense ceramic substrate delivers high thermal conductivity, low dielectric loss and superior electrical insulation. It serves as core thermal spreading base for power modules, high‑frequency circuits, CPO optical packaging and optical heat‑sink components, releasing concentrated heat of high‑power

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Product Detail PageAluminum Nitride Ceramic Substrate High‑Thermal CAS 24304‑00‑5, for Power Module High‑Frequency CPO Optical Heat SinkThis aluminum nitride ceramic substrate is manufactured starting from high‑purity aluminum nitride raw powder. The production workflow includes slurry preparation, tape‑casting green sheet forming, stacking, debinding and high‑pressure sintering under nitrogen protective atmosphere. Subsequent precision machining, lapping and surface grinding guarantee flatness and dimensional accuracy of finished ceramic plates. Strict sintering process control minimizes internal residual pores and restricts oxygen‑related impurities, so that the substrate retains high bulk thermal conductivity together with dense micro‑structure.

For power module applications, the AlN ceramic substrate acts as insulating thermal‑spreading carrier between semiconductor power chips and metal heat sink. It rapidly conducts away the massive heat generated during high‑current switching operation, meanwhile providing reliable electrical isolation between different circuit zones. It effectively suppresses local hot‑spots and reduces thermal‑induced fatigue of power semiconductor devices.

In high‑frequency circuit scenarios, aluminum nitride exhibits low dielectric constant and low dielectric loss at high‑frequency band. The substrate minimizes signal attenuation and phase shift, making it well‑suited for high‑speed radio‑frequency and high‑frequency electronic assemblies.

For CPO optical packaging and optical heat‑sink applications, dense AlN ceramic substrate functions as a precision heat‑dissipation base for high‑density optical transceiver chips. The outstanding heat‑spreading capability stabilizes chip operating temperature and restrains thermal‑caused wavelength drift of optical components, which is critical to guarantee consistent optical transmission performance for CPO modules in data‑center infrastructure. The rigid ceramic base also provides excellent mechanical support for delicate optical components.

Metallization treatment including thick‑film metallization, DBC or AMB copper plating can be implemented on substrate surfaces according to customer requirements. The metallized layer enables soldering and direct chip‑attachment processes for power chips and optical devices. Custom cutting, grooving and hole‑opening machining services are available to match specific module layout designs.

Finished AlN ceramic substrates shall be stored in dry and dust‑free conditions to avoid surface contamination. Hard impacts must be prevented during handling because sintered aluminum nitride ceramic is brittle. Contamination from other ceramic debris during cutting and packaging should be avoided to maintain clean surface quality for subsequent semiconductor assembly. This high‑thermal aluminum nitride ceramic substrate is a critical thermal‑management ceramic component for power modules, high‑frequency circuits, CPO optical packaging and optical heat‑sink in high‑performance optoelectronic and power semiconductor industries.

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Jishengya Technology

Shenzhen Jishengya Technology Co., Ltd. is located in Shenzhen, a special economic zone, and is a comprehensive technology enterprise integrating independent R&D, production and sales.